aug. 1999 pin configuration mitsubishi semiconductor m54585p/fp 8-unit 500ma darlington transistor array with clamp diode description m54585p and m54585fp are eight-circuit darlington tran- sistor arrays with clamping diodes. the circuits are made of npn transistors. both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. features high breakdown voltage (bv ceo 3 50v) high-current driving (ic(max) = 500ma) with clamping diodes driving available with ttl output or with pmos ic output wide operating temperature range (ta = C20 to +75 c) application drives of relays and printers, digit drives of indication ele- ments such as leds and lamps, and mos-bipolar logic ic interfaces function the m54585p and m54585fp each have eight circuits, which are npn darlington transistors. input transistors have resistance of 2.7k w between the base and input pin. a spike- killer clamping diode is provided between each output pin and gnd. output transistor emitters are all connected to the gnd pin. collector current is 500ma maximum. the maximum collec- tor-emitter voltage is 50v. the m54585fp is enclosed in a molded small flat package, enabling space-saving design. circuit diagram 7.2k 3k 2.7k com gnd input output the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : w the eight circuits share the com and gnd. 1 in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? in7 ? ? com common ? o8 in8 ? gnd 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 ? o7 ? o6 ? o5 ? o4 ? o3 ? o2 ? o1 ? ? ? ? ? ? ? y ? ? ? ? ? ? ? t ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 1 nc in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? common ? o8 in7 ? in8 ? 2 3 4 5 6 7 8 9 20 19 18 17 16 15 14 13 12 ? com gnd 10 11 ? o7 ? o6 ? o5 ? o4 ? o2 ? o3 ? o1 nc ? ? ? ? ? ? ? y ? ? ? ? ? ? ? t ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? nc : no connection package type 18p4g(p) input output input output package type 20p2n-a(fp)
aug. 1999 mitsubishi semiconductor m54585p/fp 8-unit 500ma darlington transistor array with clamp diode absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) 50 1000 1.3 1.0 0.95 8.7 1.5 2500 2.4 1.6 1.8 18 2.4 100 v v m a v ma v ce (sat) i i v ma v ma v w c c C0.5 ~ +50 500 C0.5 ~ +30 500 50 1.79(p)/1.10(fp) C20 ~ +75 C55 ~ +125 v v v o v il parameter 0 3.85 3.4 0 50 0.6 limits symbol unit i c v ih 0 0 400 200 30 ma v symbol unit parameter test conditions limits min typ + max + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. ns ns t on t off 12 240 symbol unit parameter test conditions limits min typ max v ceo i c v i i f v r p d t opr t stg ratings unit symbol parameter conditions collector-emitter voltage collector current input voltage clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature output, h current per circuit output, l ta = 25 c, when mounted on board recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) min typ max output voltage duty cycle p : no more than 6% fp : no more than 4% i c 400ma i c 200ma h input voltage l input voltage collector current (current per 1 cir- cuit when 8 circuits are coming on si- multaneously) duty cycle p : no more than 34% fp : no more than 20% electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c) v (br) ceo v f i r h fe i ceo = 100 m a v i = 3.85v, i c = 400ma v i = 3.4v, i c = 200ma v i = 3.85v v i = 25v i f = 400ma v r = 50v v ce = 4v, i c = 350ma, ta = 25 c collector-emitter breakdown voltage clamping diode forward voltage clamping diode reverse current dc amplification factor collector-emitter saturation voltage input current switching characteristics (unless otherwise noted, ta = 25 c) turn-on time turn-off time c l = 15pf (note 1)
aug. 1999 timing diagram note 1 test circuit mitsubishi semiconductor m54585p/fp 8-unit 500ma darlington transistor array with clamp diode ton 50% 50% 50% 50% toff input output pg 50 w c l open v o r l input output (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v i = 3.85v (2) input-output conditions : r l = 25 w , v o = 10v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device typical characteristics thermal derating factor characteristics ambient temperature ta (?) m54585fp m54585p power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 ? ? duty cycle (%) ? ? ? a collector current ic (ma) duty-cycle-collector characteristics (m54585p) 0 200 100 300 400 500 0 20 40 60 80 100 output saturation voltage collector current characteristics output saturation voltage v ce (sat) (v) 0 500 0 0.5 1.0 1.5 2.0 collector current ic (ma) v i = 3.4v ta = 75? ta = ?0? ta = 25? 400 300 200 100 ? ? duty cycle (%) a ? ? collector current ic (ma) duty-cycle-collector characteristics (m54585p) 0 200 100 300 400 500 0 20 40 60 80 100 ? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75?
aug. 1999 mitsubishi semiconductor m54585p/fp 8-unit 500ma darlington transistor array with clamp diode ? ? ? ? duty cycle (%) ? a collector current ic (ma) duty-cycle-collector characteristics (m54585fp) 0 200 100 300 400 500 0 20 40 60 80 100 input voltage v i (v) input current i i (ma) 0 4 2 6 8 10 0 5 10152025 ? ? ? ? duty cycle (%) ? a collector current ic (ma) duty-cycle-collector characteristics (m54585fp) 0 200 100 300 400 500 0 20 40 60 80 100 dc amplification factor collector current characteristics input characteristics collector current ic (ma) 10 1 10 3 v ce = 4v ta = 75? ta = ?0? 5 3 2 7 5 3 2 7 10 4 10 3 10 2 23 57 23 57 10 2 dc amplification factor h fe ta = 25? v i = 3.4v ta = 75? ta = ?0? ta = 25? grounded emitter transfer characteristics input voltage v i (v) 0 500 0 1234 collector current ic (ma) v ce = 4v ta =?0? ta = 75? ta = 25? 400 300 200 100 clamping diode characteristics forward bias voltage v f (v) 0 500 0 0.5 1.0 1.5 2.0 forward bias current i f (ma) ta = 75? ta = ?0? ta = 25? 400 300 200 100 ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75?
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